摘要

Hall Effect measurement is a unique tool to provide basic material parameters needed to find the suitability of its application. The van der Pauw technique is commonly used for electrical transport measurements on solid materials and is suited to thin, arbitrarily shaped samples, with the contacts placed anywhere on the periphery. Present study reports Hall Effect measurements on grown crystals of MoSe(2) using van der Pauw technique by taking ohmic contacts using different methods viz contacts prepared by conducting silver paste, thermally evaporated indium dots and by diffusion of indium ingot on cleaned surfaces. We show a highly stable ohmic contacts and thereby improved value of van der Pauw factor (vdP), F = 0.999 on MoSe(2) single crystals in the case of diffused indium contacts. This ensures better understanding of transport properties of these materials and further device performance. The stability of the result has been verified for a temperature range of 10K - 300K.

  • 出版日期2008-12