Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition

作者：Lopez Estopier R^*; Aceves Mijares M; Yu Z; Falcony C

来源：JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29(2): 021017.

DOI：10.1116/1.3554735

Room temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide (SRO) films with 5.5% silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100 degrees C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films.

• 出版日期2011-3