The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

作者：Kumar Mahesh; Rajpalke Mohana K; Roul Basanta; Bhat Thirumaleshwara N; Sinha Neeraj; Kalghatgi A T; Krupanidhi S B^*

来源：Applied Surface Science, 2011, 257(6): 2107-2110.

DOI：10.1016/j.apsusc.2010.09.058

• Nitridation
• MBE
• Silicon nitride
• GaN

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si(3)N(4) (Si(4+)) but also in the intermediate nitridation states with one (Si(1+)) or three (Si(3+)) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si(1+), Si(3+), and Si(4+) components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si(4+) component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si(3)N(4) by molecular beam epitaxy (MBE).

• 出版日期2011-1-1