Modification of the emission from InSb/AlInSb quantum-well light-emitting diodes using a small permanent magnet

作者:Mirza B I; Buckle L; Nash G R*
来源:Semiconductor Science and Technology, 2010, 25(3): 035009.
DOI:10.1088/0268-1242/25/3/035009

摘要

The emission from InSb/Al(x)In(1-x)Sb quantum-well light-emitting diodes has been investigated at 15 K, as a function of current, in a static magnetic field of approximately 120 mT (applied perpendicular to the plane of the quantum well). Comparison with similar measurements made in no field show that at low currents (high net bias) the magnetic field increases the number of transitions contributing to the emission spectra.

  • 出版日期2010-3-4

全文