AlN Two-Dimensional-Mode Resonators for Ultra-High Frequency Applications

作者:Cassella Cristian*; Piazza Gianluca
来源:IEEE Electron Device Letters, 2015, 36(11): 1192-1194.
DOI:10.1109/LED.2015.2475172

摘要

In this letter, we present the first prototype of aluminum nitride two-dimensional-mode resonators (2DMRs) for operation in the ultra-high-frequency range. The 2DMRs in this letter are made of thick AlN films (5.9 mu m) and rely on both the d(31) and the d(33) coefficients of AlN to attain high electromechanical coupling (k(t)(2)), low motional resistance, and a limited lithographic control of the resonance frequency. k(t)(2) > 3.4%, a mechanical quality factor larger than 2400, and > 10% lithographic variation of the center frequency were demonstrated.

  • 出版日期2015-11