AlGaN/GaN Heterostructure Field-Effect Transistor with Semi-Insulating Mg-Doped GaN Cap Layer

作者：Lee K H^*; Chang P C; Chang S J

来源：ECS Solid State Letters, 2012, 1(1): Q14-Q16.

DOI：10.1149/2.011201ssl

We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulating Mg-doped GaN (GaN: Mg) cap layer. Without activation, the GaN: Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-mu m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (I-DSS) of 735 mA/mm and a peak transconductance g(m(max)) of 170 mS/mm, while the current gain cutoff frequency (f(T)) and maximum frequency of oscillation (f(max)) were 20.5 and 33.3 GHz, respectively.

• 出版日期2012