Annealing-induced interfacial atomic intermixing in InAs/GaSb type II superlattices

作者：Li, Xiaochao; Zhang, Yong^*; Jiang, Dongwei; Guo, Fengyun; Zhao, Liancheng

来源：Applied Physics Letters, 2017, 111(17): 172101.

DOI：10.1063/1.4999391

We have investigated the effect of post-growth rapid thermal annealing (RTA) on the interface structure and atomic intermixing of InAs/GaSb type II superlattices (T2SLs). It is found that the mechanism of interfacial atomic interdiffusion of the anion (In/Ga) and the cation (As/Sb) is different. The activation energies of 0.62 eV and 0.27 eV are calculated to describe the In/Ga and As/Sb interdiffusion. In T2SLs, RTA will promote As/Sb intermixing across the interfaces between 450 and 480 degrees C, while In/Ga intermixing will be activated at 500 degrees C annealing. This demonstrates that the appropriate In/Ga intermixing is important to control the deterioration of the interfacial quality and the formation of dislocations, which is very crucial for the device performance. Published by AIP Publishing.

• 出版日期2017-10-23
• 单位哈尔滨工业大学