Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films

作者：Kukli K^*; Ritala M; Pore V; Leskela M; Sajavaara T; Hegde RI; Gilmer DC; Tobin PJ; Jones AC; Aspinall HC

来源：Chemical Vapor Deposition, 2006, 12(2-3): 158-164.

DOI：10.1002/cvde.200506388

• atomic layer deposition
• capacitors
• dielectrics
• lanthanides
• metal-oxide-semiconductor devices

Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe3)(2)](3), and water as precursors in the substrate temperature range of 150-250 degrees C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La2O3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO3 at 225 degrees C from La[N(SiMe3)(2)](3), Al(CH3)(3), and H2O. The lanthanum beta-diketonate precursor, La(thd)(3), was used as the reference precursor.

• 出版日期2006-3