Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20 cm(2) V(-1)s(-1)

作者：Wubet Walelign; Kuo Dong Hau^*

来源：Materials Research Bulletin, 2014, 53: 290-294.

DOI：10.1016/j.materresbull.2014.02.028

• Microstructure
• Semiconductor
• Electrical properties

CuSbS2 bulks have been prepared by reactive sintering the mixture of CuS and Sb2S3 at 350, 375, 400, 450, and 500 degrees C for 2 h and at the sintering temperature of 400 degrees C for 0.5, 1, 2, and 3 h under a compensation disc of CuS for atmospheric control. Composition, Structure, morphology, and electrical properties of the sintered bulks were analyzed. The compositions of Cu, Sb and S did not change until the temperature reached at and above 450 degrees C. The highest electrical conductivity of 15 S cm(-1) and the highest mobility of 20 cm(2) V-1 s(-1) were achieved for CuSbS2 sintered at 400 degrees C for 2 h. 5% deviations in the Cu/Sb and S/(Cu + Sb) rations caused a serious problem in the degradation of electrical properties, though the CuSbS2 remained as a single phase. Therefore, CuSbS2 is the semiconductor needs to have a controlled composition.

• 出版日期2014-5