A Q-BAND CMOS LOW-NOISE AMPLIFIER USING A LOW-VOLTAGE CASCODE IN 0.13-mu m CMOS TECHNOLOGY

作者：Lee Seong Gwon; Lee Jong Wook^*

来源：Microwave and Optical Technology Letters, 2011, 53(12): 2985-2988.

DOI：10.1002/mop.26389

• millimeter-wave
• Q-band
• CMOS
• low-noise amplifier
• low-voltage operation

A Q-band low-noise amplifier (LNA) suitable for low-voltage operation is presented in this paper. The amplifier uses a low-voltage cascode structure in the first stage of the amplifier and was fabricated using a 0.13-mu m RF CMOS process with eight layers of copper metallization. Low-voltage operation of the LNA was achieved in the millimeter-wave band while still maintaining the high-gain advantage of the cascode structure. Measured results show that the amplifier adopting the low-voltage cascode structure provides similar gain to the conventional, telescopic cascode structure. The fabricated amplifier presented here achieves a 19.5-dB small-signal gain and a 7.5-dB noise figure at 45 GHz.

• 出版日期2011-12