A magnetoelectric memory cell with coercivity state as writing data bit

作者：Li, Zheng^*; Wang, Jing; Lin, Yuanhua; Nan, C. W.

来源：Applied Physics Letters, 2010, 96(16): 162505.

DOI：10.1063/1.3405722

• DATA-STORAGE
• ELECTRIC-FIELD

Commercial magnetic recording media employ magnetic-field-induced two different magnetization states +/- M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field H-c states (i.e., low-H-c and high-H-c) rather than +/- M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93Ge0.07 film grown on fully poled ferroelectric BiScO3-PbTiO3 substrate, exhibiting a large electric-field modulation of H-c, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field H-c information written by electric fields is demonstrated by using magnetoresistance read head.

• 出版日期2010-4-19
• 单位新型陶瓷与精细工艺国家重点实验室; 清华大学