A Model of Air-Gap Through-Silicon Vias (TSVs) for Microwave Applications

作者：Liu, Xiaoxian^*; Zhu, Zhangming; Yang, Yintang; Ding, Ruixue

来源：IEEE Microwave and Wireless Components Letters, 2015, 25(8): 493-495.

DOI：10.1109/LMWC.2015.2440659

• Air-gap through-silicon vias (TSVs)
• equivalent-circuit model
• GSG-type
• high speed three-dimensional integrated circuits (3-D ICs)

In this letter, Ground-Signal-Ground type through-silicon vias (TSVs) are designed to achieve millimeter wave applications in three-dimensional integrated circuits (3-D ICs). Air-gap is exploited as the insulation layer due to the low permittivity. The accurate wideband equivalent-circuit model are established with frequency up to 20 GHz by using a set of resistance inductance capacitance conductance (RLGC) parameters, which are derived from the different design physical parameters and materials of the TSVs. Good agreements between the proposed models and full-wave simulation of Ansoft's HFSS are shown over a wide frequency range of interest.

• 出版日期2015-8
• 单位西安电子科技大学