Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3-SrTiO3 interfaces

作者：Jany R^*; Breitschaft M; Hammerl G; Horsche A; Richter C; Paetel S; Mannhart J; Stucki N; Reyren N; Gariglio S; Zubko P; Caviglia A D; Triscone J M

来源：Applied Physics Letters, 2010, 96(18): 183504.

DOI：10.1063/1.3428433

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

• 出版日期2010-5-3