摘要
A solution-processable and electroactive complex of poly (N-vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer polymerization, with tolylene-2,5-diisocyanate-functionalized graphene oxide. The Al/GO-PVK/ITO device exhibits bistable electrical conductivity switching and nonvolatile rewritable memory effects. Both the OFF and ON states of the memory device are stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10(8) read cycles, with an ON/OFF state current ratio in excess of 10(3).
- 出版日期2009-12-21
- 单位华东理工大学