A CMOS MEMS Capacitive Flow Sensor for Respiratory Monitoring

作者：Liao Shih Hsin^*; Chen Wei Jim; Lu Michael S C

来源：IEEE Sensors Journal, 2013, 13(5): 1401-1402.

DOI：10.1109/JSEN.2013.2245320

• Capacitive flow sensors
• complementary metal-oxide-semiconductor (CMOS)
• microelectromechanical systems (MEMS)
• respiratory monitoring

This letter presents a novel complementary metal-oxide-semiconductor (CMOS) micromachined capacitive flow sensor for respiratory monitoring. Airflow induces a pressure change on the suspended sensing plate and causes a capacitance change with respect to the bottom electrode. The microstructure fabricated by post-CMOS metal etch occupies an area of 190 x 190 mu m(2) and possesses a sensing capacitance of 180 fF. Output waveform of consecutive breaths is successfully measured with an output noise of 14 mu V for a measuring bandwidth of 0.5 Hz, which is equivalent to a minimum detectable capacitance change and airflow velocity of 0.13 aF and 0.2 mm/sec, respectively.

• 出版日期2013-5
• 单位清华大学