Density-matrix Chern insulators: Finite-temperature generalization of topological insulators

作者:Rivas A*; Viyuela O; Martin Delgado M A
来源:Physical Review B, 2013, 88(15): 155141.
DOI:10.1103/PhysRevB.88.155141

摘要

Thermal noise can destroy topological insulators (TI). However, we demonstrate how TIs can be made stable in dissipative systems. To that aim, we introduce the notion of band Liouvillian as the dissipative counterpart of band Hamiltonian, and show a method to evaluate the topological order of its steady state. This is based on a generalization of the Chern number valid for general mixed states (referred to as density-matrix Chern value), which witnesses topological order in a system coupled to external noise. Additionally, we study its relation with the electrical conductivity at finite temperature, which is not a topological property. Nonetheless, the density-matrix Chern value represents the part of the conductivity which is topological due to the presence of quantum mixed edge states at finite temperature. To make our formalism concrete, we apply these concepts to the two-dimensional Haldane model in the presence of thermal dissipation, but our results hold for arbitrary dimensions and density matrices.

  • 出版日期2013-10-31