A physics-based compact direct-current and alternating-current model for AlGaN/GaN high electron mobility transistors

作者：Li Miao^*; Wang Yan

来源：Chinese Physics Letters, 2007, 24(10): 2998-3001.

• ANALYTIC MODEL
• FIELD
• VOLTAGE
• CAPACITANCE
• TRANSPORT

A set of analytical models for the dc and small signal characteristics of AlGaN/GaN high election mobility transistors (HEMTs) are presented. A modified transferred-electron mobility model is adapted and a phenomenological low-field mobility model is developed. We calculate the channel charge considering the neutralization of donors and the contribution of free electrons in the AlGaN layer. The gate-to-source and gate-to-drain capacitances are obtained analytically, and the cut-off frequency is predicted. The models are implemented into the HSPICE simulator for the dc, ac and transient simulations and verified by experimental data for the first time. A high efficiency class-E GaN HEMT power amplifier is designed and simulated by the HSPICE to verify the applicability of our models.

• 出版日期2007-10
• 单位清华大学