Aligned carbon nanotubes for through-wafer interconnects

作者：Xu Ting; Wang Zhihong; Miao Jianmin^*; Chen Xiaofeng; Tan Cher Ming

来源：Applied Physics Letters, 2007, 91(4): 042108.

DOI：10.1063/1.2759989

Through-wafer interconnects by aligned carbon nanotube for three-dimensional stack integrated chip packaging applications have been reported in this letter. Two silicon wafers are bonded together by tetra-ethyl-ortho-silicate. The top wafer (100 mu m thick) with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer (Fe) on the bottom wafer. By using thermal chemical vapor deposition technique, the authors have demonstrated the capability of growing aligned carbon nanotube bundles with an average length of 140 mu m and a diameter of 30 mu m from the through holes. The resistivity of the bundles is measured to be 0.0097 Omega cm by using a nanomanipulator.

• 出版日期2007-7-23
• 单位西安交通大学; 南阳理工学院