摘要

In this paper, a novel defected ground structure (BIGS), connected in parallel to two periodic structures with different center frequencies of the stopband, is proposed for increasing the output power of a voltage-controlled oscillator (VCO) in microstrip circuits. To evaluate the effects of DGS on the output power, two GaAs field-effect transistor (FET) VCOs have been designed and fabricated. One of them has a 50Omega microstrip line with DGS at the output section, while the other has only a 50Omega straight line. Measured results show that DGS rejects the second harmonic at the output and yields improved output power by 1-5%.