An SOI thermal-diffusivity-based temperature sensor with +/- 0.6 degrees C (3 sigma) untrimmed inaccuracy from -70 degrees C to 225 degrees C

作者：van Vroonhoven C P L^*; Makinwa K A A

来源：Sensors and Actuators A: Physical , 2012, 188: 66-74.

DOI：10.1016/j.sna.2012.02.024

• Temperature sensors
• Thermal diffusivity
• Thermal conductivity
• Heat diffusion
• Phase digitizer
• Smart sensor

This work presents the first thermal-diffusivity-based temperature sensor realized in SOI technology; it has an untrimmed inaccuracy of +/- 0.6 degrees C (3 sigma) from -70 degrees C up to 225 degrees C and uses up to 7x less power than prior art. The sensor uses the phase shift of an Electrothermal Filter (ETF) as a proxy for the thermal diffusivity of silicon, D, which has a well-defined 1/T-1.8 temperature dependence. The ETF%26apos;s output is then digitized by a phase-domain sigma-delta modulator. Measured data from several process lots show that that the sensor%26apos;s inaccuracy is mainly limited by lithographic spread, and not by wafer-to-wafer or batch-to-batch variations.

• 出版日期2012-12