SiO(x)-planarized and transistor outlook-packaged oxide-confined vertical-cavity surface-emitting lasers with ring-shape geometry for high-speed (10 Gb/s) operation

作者：Tsai Chia Lung^*; Lin Jia Qing; Lee Feng Ming; Chou Yi Lun; Wu Meng Chyi

来源：Journal of Vacuum Science and Technology B, 2009, 27(1): 156-160.

DOI：10.1116/1.3072514

This study explores an alternative approach to fabricate the 850 nm SiO(x)-planarized ring-shape vertical-cavity surface-emitting lasers (VCSELs) with stable lasing emission and high-speed operation. The fabricated ring-shape VCSELs have an inner oxide diameter of 9 mu m and an outer oxide diameter of 15 mu m. These devices show a threshold current of 3.65 mA, a maximum light output power of 7.5 mW at 25 mA, and a differential resistance of 65 Omega at room temperature. Furthermore, they exhibit a stable dual-mode behavior over the operation current of 25 mA. Moreover, this TO-packaged 850 nm VCSEL for small-signal analyses shows a maximum modulation frequency of about 8 GHz, which is corresponding to a modulation-current efficiency factor of 2.47 GHz/mA(1/2). This VCSEL also shows a clear and symmetric eye-opening feature at 10.3 Gbytes/s and 18 mA for back-to-back and 66 m transmission tests. Based on these results, the excellent high-speed performance can be fulfilled by the SiO(x)-planarized and TO-packaged oxide-confined VCSELs with ring-shape geometry.

• 出版日期2009-2
• 单位清华大学; 长春大学