Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs

作者：Wang, M C; Chang, T C^*; Liu, Po Tsun; Li, Y Y; Xiao, R W; Lin, L F; Chen, J R

来源：Electrochemical and Solid-State Letters, 2007, 10(10): J123-J125.

DOI：10.1149/1.2756303

For effectively reducing the off-state signal loss resulting from the a-Si: H thin film transistors' (TFTs) photo leakage current, the a-Si: H TFTs with the use of indium tin oxide as source-drain metal have been fabricated for this study. A remarkable transformation in photo leakage current has been observed under the 3300 cd/m(2) cold cathode fluorescent lamp (CCFL) backlight illumination. The source-drain barrier height engineering has been proposed for this study. According to the energy band diagram, the barrier height for hole is estimated to be about 3 eV. As a result, the photogeneration holes blocked in the Schottky barrier could effectively result in the different characteristic of photo leakage current.

• 出版日期2007
• 单位中山大学; 中国科学院电工研究所; 清华大学