An SOI bulk-micromachined dual SPDT RF-MEMS switch by layer-wise separation design of waveguide and switching mechanism

作者：Yamane Daisuke^*; Sun Winston; Seita Harunobu; Kawasaki Shigeo; Fujita Hiroyuki; Toshiyoshi Hiroshi

来源：IEICE Electronics Express, 2010, 7(2): 80-85.

DOI：10.1587/elex.7.80

• RF-MEMS switch
• SOI wafer
• layer-wise layout
• electroplating
• electrostatic actuator
• laterally actuated

A compact monolithic RF-MEMS switch (2mm x 4mm in area) with the dual single-pole-double-throw (SPDT) configuration was developed by using the SOI bulk micromachining technique. The electrostatic comb-drive actuators and the mechanically movable coplanar waveguides were implemented on the low-resistive active SOI layer and the high-resistive handle layer, respectively, to effectively allocate the device footprint. Electrical crosstalk between the waveguide and the electrostatic actuator was suppressed by using the buried silicon dioxide layer. At a driving voltage of 35 V, the switch exhibits an insertion loss of 3 dB and isolation of 30 dB at 12GHz.

• 出版日期2010-1-25