A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

作者：Fu C H; Chang Liao K S^*; Chang Y A; Hsu Y Y; Tzeng T H; Wang T K; Heh D W; Gu P Y; Tsai M J

来源：Microelectronic Engineering, 2011, 88(7): 1309-1311.

DOI：10.1016/j.mee.2011.03.073

• Higher-k
• Gate dielectric
• HfO2
• Ti
• EOT

Annealing effects on electrical characteristics and reliability of MOS device with HfO2 or Ti/HfO2 high-k dielectric are studied in this work. For the sample with Ti/HfO2 higher-k dielectric after a post-metallization annealing (PMA) at 600 degrees C, its equivalent oxide thickness value is 7.6 angstrom and the leakage density is about 4.5 x 10(-2) A/cm(2). As the PMA is above 700 degrees C, the electrical characteristics of MOS device would be severely degraded.

• 出版日期2011-7
• 单位清华大学