4H-SiC trench IGBT with lower on-state voltage drop

作者：Liu, Yan-juan; Wang, Ying^*; Yu, Cheng-hao; Fei-Cao

来源：Superlattices and Microstructures, 2017, 103: 56-63.

DOI：10.1016/j.spmi.2016.11.036

• 4H-SiC
• Trench-gate IGBT
• On-state voltage drop
• Trade-off curve

In this paper, a new 4H-SiC trench-gate IGBT structure incorporated a P+ shielding region in the emitter side is proposed in order to reduce the on-state voltage drop. Through the 2-D ATLAS simulation, the characteristics of the proposed structure are investigated and compared with the conventional structure. The simulation results indicate that the proposed structure exhibits an improvement in the following. Firstly, the on-state voltage drop is reduced by 32.75%. Secondly, the differential specific on-resistance is reduced by 42.33%. Finally, under the same on-state voltage drop, the turn-off energy is reduced more than 50.00%. At the end of the paper, it is explored that what effects the physical parameter of the P+ shielding region in the proposed structure have on the steady state performances.

• 出版日期2017-3
• 单位杭州电子科技大学; 哈尔滨工程大学