ANALYTICAL DESIGN OF AN INVERSE CLASS F POWER AMPLIFIER FOR LINEAR AMPLIFICATION

作者：Xu Yingjie^*; Wang Jingqi; Zhu Xiaowei

来源：Microwave Journal, 2011, 54(5): 146-+.

In this article, a 2.5 to 2.6 GHz highly efficient inverse Class F power amplifier (PA), based on Cree's CGH40010 GaN HEMT, is presented for linear amplification. The second and third harmonic load impedances are found by harmonic load pull simulation, and controlled by the output harmonic matching network (HMN). Meanwhile, the second harmonic source impedance, which plays a crucial role in high efficiency PA design, is controlled by the input HMN. The parameters of the HMNs are obtained by analytical calculation. Measurement results show that the drain efficiency of the fabricated PA is over 75 percent at an output power of 41.4 dBm for the 26 dBm, 2.55 GHz CW input signal. For a 20 MHz four-carrier orthogonal frequency division multiplexing (OFDM) signal with 10.39 dB peak-to-average power ratio (PAPR), the adjacent channel leakage ratio (ACLR) of the PA is suppressed to below -45 dBc after employing signal crest factor reduction (CFR) and digital predistortion (DPD).

• 出版日期2011-5
• 单位东南大学