Ambipolar thin-film transistors and an inverter based on pentacene/self-assembled monolayer modified ZnO hybrid structures for balanced hole and electron mobilities

作者：Yang Chanwoo; Kwack Youngjin; Kim Se Hyun; An Tae Kyu; Hong Kipyo; Nam Sooji; Park Mijeong; Choi Woon Seop; Park Chan Eon^*

来源：Organic Electronics, 2011, 12(3): 411-418.

DOI：10.1016/j.orgel.2010.12.008

• Ambipolar thin-film transistor
• Organic-inorganic hybrid transistor
• Complementary-like inverter
• Organic semiconductor
• Oxide semiconductor
• Pentacene
• ZnO

We have fabricated high performance ambipolar thin-film transistors (TFTs) and an inverter based on organic-inorganic bilayer structures composed of an upper pentacene layer and a lower atomic-layer-deposited zinc oxide (ZnO) layer. The insertion of a dodecanoic acid (DA) self-assembled monolayer (SAM) into the interface between pentacene and ZnO results in an improvement in the morphology of the pentacene layer and in well-balanced ambipolarity with hole and electron mobilities of 0.34 and 0.38 cm(2)V (1)s (1), respectively. The ambipolar TFTs with DA-treated ZnO exhibit a hole to electron mobility ratio of approximately 0.90, which is higher by a factor of similar to 2.8 than that of ambipolar TFTs with untreated ZnO. We also tested the introduction of a perfluorooctyltriethoxysilane (PFOTES) SAM; the effects of the permanent dipole fields of the SAMs on the electrical and ambipolar characteristics of the hybrid TFTs were investigated.

• 出版日期2011-3