Analysis of Flicker Noise for Improved Data Retention Characteristics in Silicon-Oxide-High-k-Oxide-Silicon Flash Memory Using N-2 Implantation

作者：Yang S D; Jeong K S; Yun H J; Kim Y M; Lee S Y; Oh J S; Lee H D; Lee G W^*

来源：Journal of Nanoscience and Nanotechnology, 2013, 13(5): 3331-3334.

DOI：10.1166/jnn.2013.7294

• Flicker Noise
• N-2 Implantation
• Data Retention
• SOHOS

In this paper, we fabricate planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and the planar-type SOHOS devices with N-2 implantation of 3 x 10(15) dose in a tunneling oxide to determine the impact of N-2 implantation in the tunneling oxide of a memory device. The N-2 implantation device has better retention characteristics than the device with no implantation. In order establish the correlation between N-2 implantation and retention characteristic improvement, the low frequency noise (1/f noise) characteristic is investigated. The normalized drain current noise (S-ID/I-D(2)) level of the N-2 implantation device is higher than that of the device with no implantation, which means that N-2 implantation causes more trap formation near the interface. Considering that N-2 implantation does not affect the DC transfer characteristics, such as mobility and sub-threshold slope, this finding indicates that the increase in the 1/f noise level is due to oxide traps rather than to interface traps. Therefore, the retention characteristic improvement in the N-2 implantation device can be explained by the generation of higher number of oxide traps and an increase in the potential barrier blocking the leakage path in the tunneling oxide.

• 出版日期2013-5