An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM

作者：Na Taehui^*; Kim Jisu; Kim Jung Pill; Kang Seung H; Jung Seong Ook

来源：IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014, 22(7): 1620-1624.

DOI：10.1109/TVLSI.2013.2294095

• Low current
• magnetoresistive random access memory (MRAM)
• offset cancelation
• sensing circuit
• sensing margin
• spin-transfer torque random access memory (STT-RAM)
• triple stage

Spin-transfer torque random access memory (STT-RAM) is considered to be a leading candidate for next-generation memory. As technology scales, however, the sensing margin of STT-RAM is significantly degraded because of increased process variation. Furthermore, the sensing current should be <20 mu A to protect the read disturbance in the beyond 45-nm technology, leading to a further decrease in the sensing margin. To achieve a target yield of six sigma in the beyond 45-nm technology with a sensing current of <20 mu A, an offset-canceling triple-stage (OCTS) sensing circuit is proposed in this brief. The OCTS sensing circuit can overcome the sensing margin and read disturbance problems by sacrificing the sensing time. Monte Carlo HSPICE simulation results using a 45-nm technology model show that the OCTS sensing circuit achieves a target yield of six sigma (96.74% for 32 Mb) with a sensing current of 20 mu A and a sensing time of 6.4 ns.

• 出版日期2014-7