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摘要
To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO2 resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO2 is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per- inch are shown.
- 出版日期2012-12-4
