Comparison of beryllium oxide and pyrolytic graphite crucibles for boron doped silicon epitaxy

作者：Ali Dyan^*; Richardson Christopher J K

来源：Journal of Vacuum Science and Technology A, 2012, 30(6): 061603.

DOI：10.1116/1.4764509

• beryllium compounds
• boron
• elemental semiconductors
• graphite
• molecular beam epitaxial growth
• pyrolysis
• rough surfaces
• secondary ion mass spectra
• semiconductor doping
• semiconductor epitaxial layers
• semiconductor growth
• silicon
• X-ray diffraction

This article reports on the comparison of beryllium oxide and pyrolytic graphite as crucible liners in a high-temperature effusion cell used for boron doping in silicon grown by molecular beam epitaxy. Secondary ion mass spectroscopy analysis indicates decomposition of the beryllium oxide liner, leading to significant incorporation of beryllium and oxygen in the grown films. The resulting films are of poor crystal quality with rough surfaces and broad x-ray diffraction peaks. Alternatively, the use of pyrolytic graphite crucible liners results in higher quality films.

• 出版日期2012-11