Differences Between Nanoscale Structural and Electrical Properties of AZO:N and AZO Used in Polymer Light-Emitting Diodes

作者：Chen Sy Hann^*; Yu Chang Feng

来源：Microscopy Research and Technique, 2010, 73(3): 202-205.

DOI：10.1002/jemt.20775

• conducting atomic force microscopy
• scanning surface potential microscopy
• N-doped aluminum zinc oxide
• pulsed laser deposition
• polymer light-emitting diodes

Conducting atomic force microscopy and scanning surface potential microscopy were adopted to investigate the nanoscale surface electrical properties of N-doped aluminum zinc oxide (AZO:N) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures. Experimental results demonstrated that when the substrate temperature is 150 degrees C and the N(2)O background pressure is 150 mTorr, the N-dopant concentration on the surface is optimal. In addition, the root-me an-square roughness value of the film surface, the low contact current (<400 nA) conducting region as a percentage of the total area, and the mean work function value are 1.43 nm, 96.9%, and 4.88 eV, respectively, all of which are better than those of the optimal AZO film made by PLD. This result indicates that N-doped AZO films are better for use as window materials in polymer light-emitting diodes. Microsc. Res. Tech. 73:202-205, 2010.

• 出版日期2010-3