摘要
Silver sulfide thin films (Ag2S) with thickness ranging from 90 to 290 nm were synthesizedusing a low temperature (110 degrees C) solid-vapor reaction by sulfurizing(3h) sputtered silver on glass substrates. Samples were characterized by X-Ray diffraction, Field Emission Gun Scanning Electron Microscopy and Energy Dispersive X-Ray Spectroscopy. In addition, optical and electrical properties were investigated using an Ultraviolet-Visible Spectrophotometer and a Physical Properties Measurement System. Results showsband gaps in the range of 1.7 to 2.6 eV that are dependent on the film thickness. Electrical propertiesexhibit a hysteresis I-V curve that is characteristic of memory devices and can be attributed to the Ag+ ions migration inside the Ag2S film forming conducting filaments.
- 出版日期2016-5