A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 mu m high voltage (650 V) DIMOS process

作者：Song Ki Nam; Kim Hyoung Woo; Kim Ki Hyun; Seo Kil Soo; Han Seok Bung^*

来源：Microelectronics Journal, 2011, 42(1): 74-81.

DOI：10.1016/j.mejo.2010.09.002

• Half bridge driver
• High voltage integrated circuits
• High voltage level shifter
• Common mode noise
• LLC resonant converter

In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 mu m high voltage (650V) Dielectric Isolation MOS (DIMOS) process. The Designed IC is suitable for medium power (under 500W) applications such as consumer electronics. Half bridge converter driver IC with a novel common mode rejection technique, which is composed of noise filter and set inhibitor, shows high dv/dt noise immunity up to 66.67 V/ns. Spectre simulation was performed to verify the electrical characteristics of the designed IC.

• 出版日期2011-1