Densities and Surface Reaction Probabilities of Oxygen and Nitrogen Atoms During Sputter Deposition of ZnInON on ZnO

作者：Matsushima Koichi; Ide Tomoaki; Takeda Keigo; Hori Masaru; Yamashita Daisuke; Seo Hyunwoong; Koga Kazunori; Shiratani Masaharu; Itagaki Naho

来源：IEEE Transactions on Plasma Science, 2017, 45(2): 323-327.

DOI：10.1109/TPS.2016.2632124

• Absorption spectroscopy
• N
• O
• plasma
• sputtering
• ZnInON
• ZnO

We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of 4.5 x 10(11) cm(-3) irrespective of O-2 gas flow rate, whereas N density increases sharply from 2.7x10(11) cm(-3) for O-2 gas sccm to 7.7 x 10(11) cm(-3) for 0.6 sccm and it increases gradually 10(11) cm(-3) for 5 sccm. The surface reaction probability beta(O) of O atoms on ZnInON increases significantly from 0.022 to 0.404 with increasing O-2 gas flow rate from 0 to 5 sccm, whereas beta(N) of N atoms on ZnInON decreases slightly from 0.018 to 0.006. The stoichiometric chemical compositional ratio of ZnInON films with [Zn]/([Zn] + [In]) = [O]/([O] + [N]) = 94% is obtained at beta(O) = 0.404 of O atoms. This stoichiometric compositional ZnInON films grow coherently on ZnO templates, while nonstoichiometric films do not. The stoichiometric chemical composition is the key to coherent growth of ZnInON films.

• 出版日期2017-3