A high-performance polysilicon thin-film transistor built on a trenched body

作者：Lin, Jyi Tsong^*; Huang, Kuo Dong

来源：IEEE Transactions on Electron Devices, 2008, 55(9): 2417-2422.

DOI：10.1109/TED.2008.927667

• back-interface conduction
• grain-boundary traps
• lateral electric field
• OFF-state leakage
• thin film transistor (TFT)
• trenched body

In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is found to reduce the OFF-state leakage current by 70% on average, because the trench induces a carrier scattering effect in the poly-Si grain-boundary traps, thereby affecting the leakage path. Although the OFF-state current is substantially reduced, the ON-state current is comparable with that of a conventional TFT. Our multiple-trenched-body TFT is also shown to improve the breakdown voltage by 11%.

• 出版日期2008-9
• 单位中山大学