Donor level of interstitial hydrogen in CdTe

作者：Kolkovsky Vl; Kolkovsky V^*; Nielsen K Bonde; Dobaczewski L; Karczewski G; Larsen A Nylandsted

来源：Physical Review B, 2009, 80(16): 165205.

DOI：10.1103/PhysRevB.80.165205

The first results demonstrating the existence of a donor level of interstitial hydrogen in CdTe are presented. From the Arrhenius analysis, this donor level is characterized by an activation energy for electron emission E(C)-E(t)=0.06 eV and a pre-exponential factor equal to 2 x 10(5) s(-1) K(2), and is observed after a low-temperature implantation with protons. Above 75 K the hydrogen-deep donor state is unstable converting to a more stable configuration which is believed to be a negatively charged form of isolated H. The results are analogous to what has been observed for interstitial hydrogen in GaAs.

• 出版日期2009-10