All solution-processed amorphous oxide thin-film transistors using UV/O-3 treatment

作者：Umeda Kenichi^*; Miyasako Takaaki; Sugiyama Ayumu; Tanaka Atsushi; Suzuki Masayuki; Tokumitsu Eisuke; Shinnoda Tatsuya

来源：Japanese Journal of Applied Physics, 2014, 53(2): 02BE03.

DOI：10.7567/JJAP.53.02BE03

In the fabrication of amorphous oxide thin-film transistors (TFTs) by all-solution process, an ultraviolet-ozone (UV/O-3) treatment and solution materials were adopted. By applying the UV/O-3 treatment for solution-processed In2-xGaxZnO4 channel layers, enhancement of TFT characteristics was achieved. In particular, the most appropriate metal composition for the In2-xGaxZnO4 system with UV/O-3 treatment was found to be x = 1.0. In addition to the channel layers, solution-processed LaNiO3, Bi-Nb-O/La-Ta-O stacked layer, and ITO films were formed as the gate electrode, gate insulator, and source and drain electrodes, respectively, for TFT fabrication. Using UV/O-3 treatment and solution materials, all-solution-processed amorphous oxide TFTs were successfully fabricated, and superior TFT properties, including an on-off current ratio of 10(7), a threshold voltage of 1.6V, a subthreshold swing of 200 mV/decade, and a field-effect mobility of 0.49 cm(2)V(-1)s(-1), were achieved.

• 出版日期2014-2