Applied-voltage dependence on conductometric track etching of poly(vinylidene fluoride) films

作者：Nuryanthi N; Yamaki T^*; Koshikawa H; Asano M; Sawada S; Hasegawa S; Maekawa Y; Katsumura Y

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2013, 314: 95-98.

DOI：10.1016/j.nimb.2013.05.035

• Ion track
• Chemical etching
• Conductometry
• Poly(vinylidene fluoride) (PVDF)

We investigated the conductometric etching of heavy-ion-irradiated poly(vinylidene fluoride) (PVDF) films to study their pore growth behavior, which was estimated from radial etch rates under the application of different voltages. The plateau of the pore diameter seen in a bulk etching region was constant at an applied voltage ranging from 0.1 to 3.0 V, while the breakthrough time varied considerably. Employing the first derivative of the conductometric curve, corresponding to the radial etch rate, R, enabled us to clearly analyze parameters reflecting the track structures (i.e., the maximum radial etch rate, R-max, and the time for the diameter to reach the final plateau, T-E). Interestingly, these two parameters were significantly influenced by the applied voltage. There was a trend toward increasing values of R-max and, in contrast, decreasing levels of T-E as the applied voltage was increased. These promotional effects of the etching process can be rationalized by considering the electrophoretic migration of dissolved species in and out of each pore. Thus, conductometric etching under different voltage conditions offers the ability to control pore geometries by optimizing the etching process in the transverse direction as well as in the thickness direction.

• 出版日期2013-11-1