Drain current model of double-gate MOSFETs considering both electrons and holes

作者：Zhu Zhaomin^*; Yan Dawei; Xu Guoqing; Gu Xiaofeng

来源：IEEJ Transactions on Electrical and Electronic Engineering, 2014, 9(3): 262-266.

DOI：10.1002/tee.21965

• double gate
• compact modeling
• drain current equation
• MOSFET

We present a rigorously derived current solution for undoped double-gate (DG) MOSFETs with two carriers, which is based on surface potentials. The third-order Newton-Raphson (NR) method is used to solve the surface-potential equations resulting from the application of the boundary conditions to the general Poisson solution, with an initial guess very close to the true solution. The results demonstrate surface-potential solutions for DG MOSFETs with 2-7 iterations to achieve an accuracy of 10(-15). The drain current model for two carriers is presented as a benchmark to test the accuracy of one-carrier current approximation.

• 出版日期2014-5
• 单位江南大学