Analysis of time-dependent dielectric breakdown induced aging of SRAM cache with different configurations

作者：Zhang Rui; Liu Taizhi; Yang Kexin; Milor Linda^*

来源：Microelectronics Reliability, 2017, 76: 87-91.

DOI：10.1016/j.microrel.2017.06.040

• SRAM
• Time dependent dielectric breakdown (TDDB)
• Monte Carlo simulation
• Reliability
• Performance
• Configuration

Time dependent dielectric breakdown degrades the reliability of SRAM cache. A novel methodology to estimate SRAM cache reliability and performance is presented. The performance and reliability characteristics are obtained from activity extraction and Monte Carlo simulations, considering device dimensions, process variations, the stress probability, and the thermal distribution. Based on the reliability-performance estimation methodology, caches with various settings on associativity, cache line size, and cache size are analysed and compared. Experiments show that there exists a contradiction between performance and reliability for different cache configurations. Understanding the variation of performance and reliability can provide SRAM designers with insight on reliability -performance trade-offs for cache system design.

• 出版日期2017-9