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摘要
ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 mu m in butterfly topology by using zero-gap chrome mask. The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and Keithley SourceMeter, respectively. The current-voltage (I-V) characterization was performed to investigate the effect of UV light on the fabricated devices. The ZnO fabricated sensors showed a photo to dark current (I-ph/I-d) ratios of 6.26 for 30 mu m and 5.28 for 43 mu m gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1V, the response time was observed to be 4.817s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 mu m gaps, respectively. The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.
- 出版日期2013
