A Time-Domain Band-Gap Temperature Sensor in SOI CMOS for High-Temperature Applications

作者：Pathrose Jerrin^*; Liu Chengye; Chai Kevin T C; Xu Yong Ping

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2015, 62(5): 436-440.

DOI：10.1109/TCSII.2014.2386231

• Band-gap reference (BGR)
• high-temperature electronics
• ratiometric measurement
• smart temperature sensor

This brief presents a temperature sensor operating over a wide temperature range from 25 degrees C to 225 degrees C for oil well instrumentation applications. The temperature sensor is implemented with a simple time-domain architecture and a mapping function at the digital back end. The mapping function eliminates the need for a band-gap reference, whose temperature coefficient deteriorates the accuracy, particularly for high and wide temperature range of operation. The time-domain implementation results in low power consumption and chip area. With digital calibration at room temperature using a field-programmable gate array, the sensor achieves a worst case inaccuracy of +1.6 degrees C/-1.5 degrees C and consumes only 20-mu A current under a 4.5-V supply. The chip is fabricated with a commercial partially depleted silicon-on-insulator CMOS process and occupies a chip area of 0.41 mm(2).

• 出版日期2015-5