摘要

A p-Silicon/Zn-tetra pyridyl-porphyrin (ZnTPyP) heterojunctionwas fabricated by forming a ZnTPyP layer on a p-type Si single crystal substrate using a conventional thermal evaporation technique. Complex impedance measurements of the Al/p-Si/ZnTPyP/Au heterojunction were carried out at applied AC-voltage range from 0.2 V to 1 V, temperature range from 303 K to 353 K and over the frequency range from 100HZ to 2 MHz. Impedance spectra of the heterojunction under the standard illumination ranged from 0 to 40 mW/cm(2) were reported and analysed.

  • 出版日期2018-3-5