Dependence of dielectric constant of SiOCH low-k films on porosity and pore size

作者：Palov Alexander; Rakhimova Tatiana V; Krishtab Mikhail B; Baklanov Mikhail R^*

来源：JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33(2): 020603.

DOI：10.1116/1.4906816

A simple, clear, and robust numerical approach to calculate dielectric constant of porous organosilicate (SiOCH) based films with arbitrary shaped pores is proposed. The calculations are based on modified Clausius-Mossotti equation and can be applied for the films with wide range of porosity (0.01-0.96) and pore size (0.5-5 nm). The dielectric constants calculated in assumption of preferential localization of CH3 groups on pore wall are in good agreement with the experimentally measured k-values. The advantage of the proposed calculation model is ability to analyze the dependence of dielectric constant on pore size.

• 出版日期2015-3