Development of SnS quantum dot solar cells by SILAR method

作者：Deepa K G^*; Nagaraju J

来源：Materials Science in Semiconductor Processing, 2014, 27: 649-653.

DOI：10.1016/j.mssp.2014.08.006

• Nanoparticles
• Colloidal processing
• Solar energy materials
• Photovoltaic cells

SnS quantum dot solar cell is fabricated by Successive Ionic Layer Adsorption and Reaction (SILAR) method. SnS layer is optimized by different SILAR cycles of deposition. The particle size increased with the increase in number of SILAR cycles. Cu2S coated FTO is used as counter electrode against the conventional Platinum electrode. On comparison with a cell having a counter electrodeelectrolyte combination of Platinum-Iodine, Cu2S-polysulfide combination is found to improve both the short circuit current and fill factor of the solar cell. A maximum efficiency of 0.54% is obtained with an open circuit voltage of 311 mV and short circuit current density of 4.86 mA/cm.

• 出版日期2014-11