Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access Resistor

作者：Fan Yang Shun^*; Zhang Leqi; Crotti Davide; Witters Thomas; Jurczak Malgorzata; Govoreanu Bogdan

来源：IEEE Electron Device Letters, 2015, 36(10): 1027-1029.

DOI：10.1109/LED.2015.2470081

• Overshoot suppression
• RRAM
• resistive switching
• Ta2O5
• TaOx
• RRAM self-capacitance
• integrated access resistor

We demonstrate suppression of the overshoot current effect on a resistive random access memory device with a TiN/Ta2O5/TaOx/TaN/TiN stack structure. Using test structures with an integrated 5-k Omega series resistor, a nearly 1:1 relation between the compliance current and the first maximum reset current has been achieved, together with an opening of the ON/OFF resistance window to over 100. Besides, the cell size also plays an important role on overshoot suppression, which we relate to the effect of the device self-capacitance discharge during the set switching. According to the experimental results, a simple model for the access circuitry is proposed, which is able to explain well the overshoot impact, by identifying the main capacitance discharge loops during device operation.

• 出版日期2015-10