科研之友
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摘要
Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were prepared on p-type Si(100) substrates with TiO2 buffer layers. Both the PZT films and TiO2 buffer layers were deposited by the pulsed laser deposition technique using a KrF excimer laser. The depth profile of the constituent elements observed by Anger electron spectrometry (AES) showed that TiO2 buffer layers effectively prevented interdiffusion between PZT and Si substrates. The capacitance-voltage (C-V) characteristics of the Pt/PZT/TiO2/Si structures exhibited ferroelectric switching properties and a memory window of about 2.0 V at an applied voltage of 6.0 V.
- 出版日期2000-10-30
- 单位南京大学
