A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes

作者：Kuo Hon Yi^*; Wang Shui Jinn; Wang Pei Ren; Uang Kai Ming; Chen Tron Min; Kuan Hon

来源：Applied Physics Letters, 2008, 92(2): 021105.

DOI：10.1063/1.2834373

Through the use of tin (Sn) based solder balls and patterned laser lift-off technique, a metal substrate technology was proposed for the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs). Advantages including reserving the merits of metallic substrate and simplifying the fabrication processes of vertical-structured GaN-based LEDs were demonstrated. As compared to conventional sapphire substrate GaN-based LEDs, the fabricated VM-LEDs with an emission area of 620x620 mu m(2) show an increase in light output power about 145.36% at 350 mA with a significant decrease in forward voltage from 4.51 to 3.46 V.

• 出版日期2008-1-14