A ring oscillator based on HIFETs

作者：Koskela J^*; Kilpela A; Bjorklund N; Osterbacka R

来源：Organic Electronics, 2012, 13(1): 84-89.

DOI：10.1016/j.orgel.2011.10.009

• Organic transistor
• Field-effect transistor
• Ring oscillator
• Low voltage
• Simulation model
• Electrolyte insulator

A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.

• 出版日期2012-1